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We find a best compromise for an AgITO 3 nm67 nm ohmic contact with a relative transmittance of 97 of the bare GaN near 530 nm and a specific contact resistance of 003 Ωcm2. In this paper we investigated various metal co-evaporated copper layers CuX as seed layers on the ITO since there is a possibility of improving adhesion between the seed layer and. Ito Tin Doped Indium Oxide For Optical Coating These properties are utilized to great advantage in touch. Ito contact resistance . May 19 2009 A thermally stable TiITO Ohmic contact to n - Ga N with a low specific contact resistance of 42. No degradation was observed after the contact being subjected to. The Schottky contact barrier height at the metal and p-type semiconductor interface is given below. As the sample annealed at 600C in air. Ad Find Contact Resistance Test on sale now. ITO is both transparent to visible light and has a relatively high electrical conductivity. The specific contact resistance was furth